? 2010 ixys corporation, all rights reserved ds100237(2/10) ixfh320n10t2 IXFT320N10T2 trencht2 tm hiperfet tm power mosfet n-channel enhancement mode avalanche rated fast intrinsic diode symbol test conditions maximum ratings v dss t j = 25 c to 175 c 100 v v dgr t j = 25 c to 175 c, r gs = 1m 100 v v gss continuous 20 v v gsm transient 30 v i d25 t c = 25 c (chip capability) 320 a i lrms lead current limit, rms 160 a i dm t c = 25 c, pulse width limited by t jm 800 a i a t c = 25 c 160 a e as t c = 25 c 1.5 j dv/dt i s i dm , v dd v dss , t j 175c 15 v/ns p d t c = 25 c 1000 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6mm (0.062in.) from case for 10s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-247) 1.13 / 10 nm/lb.in. weight to-247 6 g to-268 4 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0v, i d = 1ma 100 v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20v, v ds = 0v 200 na i dss v ds = v dss , v gs = 0v 25 a t j = 150 c 1.75 ma r ds(on) v gs = 10v, i d = 100a, notes 1 & 2 3.5 m v dss = 100v i d25 = 320a r ds(on) 3.5m advance technical information g = gate d = drain s = source tab = drain to-247 (ixfh) to-268 (ixft) g s d (tab) s g d (tab) d features z high current handling capability z fast intrinsic diode z avalanche rated z fast intrinsic diode z low r ds(on) advantages z easy to mount z space savings z high power density applications z synchronous recification z dc-dc converters z battery chargers z switch-mode and resonant-mode power supplies z dc choppers z ac motor drives z uninterruptible power supplies z high speed power switching applications
ixys reserves the right to change limits, test conditions, and dimensions. ixfh320n10t2 IXFT320N10T2 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. includes lead resistance. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10v, i d = 60a, note 1 80 130 s c iss 26 nf c oss v gs = 0v, v ds = 25v, f = 1mhz 2250 pf c rss 450 pf r gi gate input resistance 1.48 t d(on) 36 ns t r 46 ns t d(off) 73 ns t f 177 ns q g(on) 430 nc q gs v gs = 10v, v ds = 0.5 ? v dss , i d = 0.5 ? i d25 110 nc q gd 125 nc r thjc 0.15 c/w r thch to-247 0.21 c/w source-drain diode symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. i s v gs = 0v 320 a i sm repetitive, pulse width limited by t jm 1200 a v sd i f = 100a, v gs = 0v, note 1 1.2 v t rr 98 ns i rm 6.6 a q rm 320 nc resistive switching times v gs = 10v, v ds = 0.5 ? v dss , i d = 100a r g = 1 (external) i f = 150a, v gs = 0v -di/dt = 100a/ s v r = 50v advance technical information the product presented herein is under development. the technical specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. ixys reserves the right to change limits, test conditions, and dimensions without notice. e ? p to-247 (ixfh) outline 1 2 3 terminals: 1 - gate 2 - drain 3 - source dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc to-268 (ixft) outline terminals: 1 - gate 2 - drain 3 - source 4 - drain
? 2010 ixys corporation, all rights reserved ixfh320n10t2 IXFT320N10T2 fig. 1. output characteristics @ t j = 25oc 0 40 80 120 160 200 240 280 320 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 5v 6v 4v fig. 3. output characteristics @ t j = 150oc 0 50 100 150 200 250 300 350 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 v ds - volts i d - amperes v gs = 15v 10v 8v 7v 5 v 6 v 4 v fig. 4. r ds(on) normalized to i d = 160a value vs. junction temperature 0.4 0.8 1.2 1.6 2.0 2.4 2.8 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 320a i d = 160a fig. 5. r ds(on) normalized to i d = 160a vs. drain current 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 50 100 150 200 250 300 350 400 i d - amperes r ds(on) - normalized v gs = 10v t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 160 180 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 400 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v ds - volts i d - amperes v gs = 15v 10v 7v 4v 5v 6v
ixys reserves the right to change limits, test conditions, and dimensions. ixfh320n10t2 IXFT320N10T2 fig. 7. input admittance 0 20 40 60 80 100 120 140 160 180 200 220 2.5 3.0 3.5 4.0 4.5 5.0 5.5 v gs - volts i d - amperes t j = 150oc 25oc - 40oc fig. 8. transconductance 0 40 80 120 160 200 240 0 20 40 60 80 100 120 140 160 180 200 220 240 i d - amperes g f s - siemens t j = - 40oc 150oc 25oc fig. 9. forward voltage drop of intrinsic diode 0 50 100 150 200 250 300 350 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 50 100 150 200 250 300 350 400 450 q g - nanocoulombs v gs - volts v ds = 50v i d = 160a i g = 10ma fig. 11. capacitance 100 1,000 10,000 100,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 110100 v ds - volts i d - amperes 25s 100s 1ms 10ms dc r ds(on) limit t j = 175oc t c = 25oc single pulse external lead limit 100ms
? 2010 ixys corporation, all rights reserved ixfh320n10t2 IXFT320N10T2 fig. 14. resistive turn-on rise time vs. drain current 0 50 100 150 200 250 300 40 60 80 100 120 140 160 180 200 i d - amperes t r - nanoseconds t j = 25oc t j = 125oc r g = 1 ? , v gs = 10v v ds = 50v fig. 15. resistive turn-on switching times vs. gate resistance 0 100 200 300 400 500 600 12345678910 r g - ohms t r - nanoseconds 10 30 50 70 90 110 130 t d(on) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 100a i d = 200a fig. 16. resistive turn-off switching times vs. junction temperature 100 150 200 250 300 350 400 450 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanoseconds 50 60 70 80 90 100 110 120 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 50v i d = 100a i d = 200a fig. 17. resistive turn-off switching times vs. drain current 0 50 100 150 200 250 300 350 400 450 500 40 60 80 100 120 140 160 180 200 i d - amperes t f - nanoseconds 60 65 70 75 80 85 90 95 100 105 110 t d ( off ) - nanoseconds t f t d(off) - - - - r g = 1 ? , v gs = 10v v ds = 50v t j = 25oc t j = 125oc fig. 13. resistive turn-on rise time vs. junction temperature 0 50 100 150 200 250 300 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 1 ? , v gs = 10v v ds = 50v i d = 200a i d = 100a fig. 18. resistive turn-off switching times vs. gate resistance 0 100 200 300 400 500 600 700 800 900 12345678910 r g - ohms t f - nanoseconds 50 100 150 200 250 300 350 400 450 500 t d ( off ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 50v i d = 200a i d = 100a
ixys reserves the right to change limits, test conditions, and dimensions. ixfh320n10t2 IXFT320N10T2 ixys ref: f_320n10t2(98)02-01-10 fig. 19. maximum transient thermal impedance 0.001 0.010 0.100 1.000 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 19. maximum transient thermal impedance dfafas 0.300
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